International Journal of Research in Engineering

International Journal of Research in Engineering

Vol. 1, Issue 4, Part A (2019)

Comparison and analysis between complemantory metallic semiconductor based three satge ring Osillator and carbon nanotube based three stage ring oscillator with Lactor technique and without Lactor technique

Author(s):

Ravinesh Bhadoriya, Nikhil Saxena

Abstract:
Nanoscale device is an optimistic solution to replace complementary metallic oxide semiconductor which is also known as CMOS technology for future nano-electronics. Novel nano-scale semiconductor devices like CNTFET transistor can use for upcoming nanoscale devices because of the magnificent performance and accurate results. A comparison between CMOS based technology and CNTFET based technology is presented as per their several parameters. Carbon nanotube is a modern promising nanoscale device which is used for executing better performance with low power and dense electronics circuits. The major concern of researchers was how to reduce the consumption of power and how to reduce the amount of leakage current in their proposed work. CNTFET technology is the technology which is used for getting the better results in term of leakage power and leakage current. CNTFET utilizes single CNT as its channel material in place of vast silicon in MOSFET.

Pages: 01-04  |  1264 Views  541 Downloads

How to cite this article:
Ravinesh Bhadoriya, Nikhil Saxena. Comparison and analysis between complemantory metallic semiconductor based three satge ring Osillator and carbon nanotube based three stage ring oscillator with Lactor technique and without Lactor technique. Int. J. Res. Eng. 2019;1(4):01-04.